Vishay IRFP Type N-Channel MOSFET, 6.1 A, 1 kV Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 178-0788
- Tillv. art.nr:
- IRFPG50PBF
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 rör med 25 enheter)*
1 083,95 kr
(exkl. moms)
1 354,95 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 25 enhet(er) från den 29 december 2025
- Dessutom levereras 500 enhet(er) från den 16 januari 2026
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 25 - 25 | 43,358 kr | 1 083,95 kr |
| 50 - 100 | 42,058 kr | 1 051,45 kr |
| 125 + | 40,324 kr | 1 008,10 kr |
*vägledande pris
- RS-artikelnummer:
- 178-0788
- Tillv. art.nr:
- IRFPG50PBF
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6.1A | |
| Maximum Drain Source Voltage Vds | 1kV | |
| Series | IRFP | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 190nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Power Dissipation Pd | 190W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.87mm | |
| Height | 20.7mm | |
| Width | 5.31 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6.1A | ||
Maximum Drain Source Voltage Vds 1kV | ||
Series IRFP | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 190nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Power Dissipation Pd 190W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Length 15.87mm | ||
Height 20.7mm | ||
Width 5.31 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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