Microchip TP2540 Type P-Channel MOSFET, 125 mA, 400 V Enhancement, 3-Pin TO-243 TP2540N8-G

RS-artikelnummer:: 177-9867
Tillv. art.nr:: TP2540N8-G
Tillverkare / varumärke:: Microchip

Microchip TP2540 Type P-Channel MOSFET, 125 mA, 400 V Enhancement, 3-Pin TO-243 TP2540N8-G

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Enheter	Per enhet	Per förpackning*
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25 - 95	18,548 kr	92,74 kr
100 +	17,83 kr	89,15 kr

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RS-artikelnummer:: 177-9867
Tillv. art.nr:: TP2540N8-G
Tillverkare / varumärke:: Microchip

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Microchip
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	125mA
	Maximum Drain Source Voltage Vds	400V
	Series	TP2540
	Package Type	TO-243
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	30Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1.6W
	Forward Voltage Vf	-1.8V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Width	2.6 mm
	Height	1.6mm
	Length	4.6mm
	Automotive Standard	No

	Välj alla
	Brand Microchip
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 125mA
	Maximum Drain Source Voltage Vds 400V
	Series TP2540
	Package Type TO-243
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 30Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1.6W
	Forward Voltage Vf -1.8V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Width 2.6 mm
	Height 1.6mm
	Length 4.6mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: TW

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Low threshold (-2.4V max.)

High input impedance

Low input capacitance (60pF typical)

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Microchip TP2540 Type P-Channel MOSFET, 125 mA, 400 V Enhancement, 3-Pin TO-243 TP2540N8-G

GRATIS leverans för online beställningar över 500,00 kr

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