Microchip DN2540 Type N-Channel MOSFET, 170 mA, 400 V Depletion, 3-Pin TO-243
- RS-artikelnummer:
- 177-2815
- Tillv. art.nr:
- DN2540N8-G
- Tillverkare / varumärke:
- Microchip
Antal (1 rulle med 2000 enheter)*
15 724,00 kr
(exkl. moms)
19 656,00 kr
(inkl. moms)
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2000 + | 7,862 kr | 15 724,00 kr |
*vägledande pris
- RS-artikelnummer:
- 177-2815
- Tillv. art.nr:
- DN2540N8-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 400V | |
| Series | DN2540 | |
| Package Type | TO-243 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 25Ω | |
| Channel Mode | Depletion | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.6W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 2.6 mm | |
| Length | 4.6mm | |
| Height | 1.6mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 400V | ||
Series DN2540 | ||
Package Type TO-243 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 25Ω | ||
Channel Mode Depletion | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.6W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 2.6 mm | ||
Length 4.6mm | ||
Height 1.6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- US
DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Additional Features:
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown Low input and output leakage
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