Microchip VN10K Type N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin TO-92

RS-artikelnummer:: 177-9706
Tillv. art.nr:: VN10KN3-G
Tillverkare / varumärke:: Microchip

Microchip VN10K Type N-Channel MOSFET, 310 mA, 60 V Enhancement, 3-Pin TO-92

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RS-artikelnummer:: 177-9706
Tillv. art.nr:: VN10KN3-G
Tillverkare / varumärke:: Microchip

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Microchip
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	310mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-92
	Series	VN10K
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.5Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	1W
	Maximum Gate Source Voltage Vgs	30 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.8V
	Maximum Operating Temperature	150°C
	Length	5.08mm
	Standards/Approvals	No
	Height	5.33mm
	Width	4.06 mm
	Automotive Standard	No

	Välj alla
	Brand Microchip
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 310mA
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-92
	Series VN10K
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.5Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 1W
	Maximum Gate Source Voltage Vgs 30 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.8V
	Maximum Operating Temperature 150°C
	Length 5.08mm
	Standards/Approvals No
	Height 5.33mm
	Width 4.06 mm
	Automotive Standard No

Datasheet

Microchip Technology MOSFET

The Microchip Technology through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 5ohms at a gate-source voltage of 10V. It has a drain-source voltage of 60V and a maximum gate-source voltage of 30V. It has continuous drain current of 310mA and maximum power dissipation of 1W. The minimum and a maximum driving voltage for this transistor are 5V and 10V respectively. The MOSFET is an enhancement mode (normally off) transistor that utilizes a vertical DMOS structure and well-proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. A significant characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. This vertical DMOS FET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Ease of paralleling

• Excellent thermal stability

• Free from secondary breakdown

• High input impedance and high gain

• Integral source drain diode

• Low CISS and fast switching speeds

• Low power drive requirement

• Operating temperature ranges between -55°C and 150°C

Applications

• Amplifiers

• Converters

• Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.)

• Motor controls

• Power supply circuits

• Switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• JEDEC