onsemi FCP Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-220 FCP067N65S3

RS-artikelnummer:: 172-4628
Tillv. art.nr:: FCP067N65S3
Tillverkare / varumärke:: onsemi

onsemi FCP Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-220 FCP067N65S3

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

246,40 kr

(exkl. moms)

308,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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2 210 enhet(er) är redo att levereras

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Enheter	Per enhet	Per förpackning*
5 - 45	49,28 kr	246,40 kr
50 - 95	42,47 kr	212,35 kr
100 +	36,826 kr	184,13 kr

*vägledande pris

RS-artikelnummer:: 172-4628
Tillv. art.nr:: FCP067N65S3
Tillverkare / varumärke:: onsemi

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	44A
	Maximum Drain Source Voltage Vds	650V
	Series	FCP
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	312W
	Maximum Gate Source Voltage Vgs	30 V
	Typical Gate Charge Qg @ Vgs	78nC
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Height	16.3mm
	Width	4.7 mm
	Standards/Approvals	No
	Length	10.67mm
	Automotive Standard	No

	Välj alla
	Brand onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 44A
	Maximum Drain Source Voltage Vds 650V
	Series FCP
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 312W
	Maximum Gate Source Voltage Vgs 30 V
	Typical Gate Charge Qg @ Vgs 78nC
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Height 16.3mm
	Width 4.7 mm
	Standards/Approvals No
	Length 10.67mm
	Automotive Standard No

COO (Country of Origin):: CN

SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.

700 V @ TJ = 150 oC

Higher system reliability at low temperature operation

Ultra Low Gate Charge (Typ. Qg = 30 nC)

Lower switching loss

Low Effective Output Capacitance (Typ. Coss(eff.) = 277 pF)

Lower switching loss

Optimized Capacitance

Lower peak Vds and lower Vgs oscillation

Internal Gate resistance: 7.0 ohm

Lower peak Vds and lower Vgs oscillation

Typ. RDS(on) = 170 mΩ

Wave soldering guarantee

Computing

Consumer

Industrial

Telecom / Server

Solar inverter / UPS

EVC

Automation

onsemi FCP Type N-Channel MOSFET, 44 A, 650 V Enhancement, 3-Pin TO-220 FCP067N65S3

GRATIS leverans för online beställningar över 500,00 kr

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