ROHM QH8MA3 Dual N/P-Channel MOSFET, 5.5 (P Channel) A, 7 (N Channel) A, 30 V, 8-Pin TSMT QH8MA3TCR

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RS-artikelnummer:
172-0348
Tillv. art.nr:
QH8MA3TCR
Tillverkare / varumärke:
ROHM
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Brand

ROHM

Channel Type

N, P

Maximum Continuous Drain Current

5.5 (P Channel) A, 7 (N Channel) A

Maximum Drain Source Voltage

30 V

Series

QH8MA3

Package Type

TSMT

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

46 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 (N Channel) V, 2.5 (P Channel) V

Minimum Gate Threshold Voltage

1 (N Channel) V, 1 (P Channel) V

Maximum Power Dissipation

2.5 W

Maximum Gate Source Voltage

±20 V

Width

2.5mm

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

7.2 nC @ 10 V

Length

3.1mm

Height

0.8mm

Forward Diode Voltage

1.2V

The Middle Power MOSFET QH8MA3 is suitable for switching power supply.

Low on - resistance.
Small Surface Mount Package (TSMT8).
Pb-free lead plating.
Halogen Free

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