onsemi NVMFS5C673NL Type N-Channel MOSFET, 50 A, 60 V Enhancement, 5-Pin DFN NVMFS5C673NLWFAFT1G
- RS-artikelnummer:
- 171-8397
- Tillv. art.nr:
- NVMFS5C673NLWFAFT1G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 20 enheter)*
230,62 kr
(exkl. moms)
288,28 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 1 060 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 20 - 180 | 11,531 kr | 230,62 kr |
| 200 - 480 | 9,94 kr | 198,80 kr |
| 500 + | 8,613 kr | 172,26 kr |
*vägledande pris
- RS-artikelnummer:
- 171-8397
- Tillv. art.nr:
- NVMFS5C673NLWFAFT1G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NVMFS5C673NL | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 13mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 46W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 9.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.1mm | |
| Height | 1.05mm | |
| Standards/Approvals | No | |
| Width | 5.1 mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NVMFS5C673NL | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 13mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 46W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 9.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 6.1mm | ||
Height 1.05mm | ||
Standards/Approvals No | ||
Width 5.1 mm | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. PPAP capable suitable for automotive applications.
Low RDS(on)
Minimize Conduction Losses
Low QG and Gate capacitance
Minimize Switching Losses
Industry standard 5x6mm package Industry
Compact Design and Standard footprint for direct drop-in
Best in-class FOM (RDS(ON) x QG)
Increased efficiency, lower power dissipation
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
a Solenoid Driver – ABS, Fuel injection
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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