onsemi Type N-Channel MOSFET, 477 A, 60 V Enhancement, 8-Pin DFN NVMTS0D7N06CLTXG
- RS-artikelnummer:
- 185-9234
- Tillv. art.nr:
- NVMTS0D7N06CLTXG
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 förpackning med 2 enheter)*
227,25 kr
(exkl. moms)
284,062 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Försörjningsbrist
På grund av begränsningar i försörjningskedjan tilldelas lager allt eftersom det blir tillgängligt.
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 113,625 kr | 227,25 kr |
| 20 - 198 | 98,00 kr | 196,00 kr |
| 200 + | 84,95 kr | 169,90 kr |
*vägledande pris
- RS-artikelnummer:
- 185-9234
- Tillv. art.nr:
- NVMTS0D7N06CLTXG
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 477A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 900μΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 225nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 294.6W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 8.1mm | |
| Width | 8 mm | |
| Height | 1.15mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 477A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 900μΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 225nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 294.6W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 8.1mm | ||
Width 8 mm | ||
Height 1.15mm | ||
Automotive Standard AEC-Q101 | ||
Uppfyller ej RoHS
- COO (Country of Origin):
- PH
Automotive Power MOSFET in a 8x8mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (8x8 mm)
Low RDS(on)
Low QG and Capacitance
Wettable Flank Option
PPAP Capable
Compact Design
Minimize Conduction Losses
Minimize Driver Losses
Enhanced Optical Inspection
Applications
Reverser Battery protection
Switching power supplies
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
End Products
Motor Control – EPS, Wipers, Fans, Seats, etc.
Load Switch – ECU, Chassis, Body
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