Infineon BSC040N08NS5 Type N-Channel MOSFET, 100 A, 80 V Enhancement, 8-Pin TDSON BSC040N08NS5ATMA1
- RS-artikelnummer:
- 171-1969
- Tillv. art.nr:
- BSC040N08NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
185,50 kr
(exkl. moms)
231,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 3 410 enhet(er) är redo att levereras
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 18,55 kr | 185,50 kr |
| 50 - 90 | 17,629 kr | 176,29 kr |
| 100 - 240 | 15,859 kr | 158,59 kr |
| 250 - 490 | 14,258 kr | 142,58 kr |
| 500 + | 13,563 kr | 135,63 kr |
*vägledande pris
- RS-artikelnummer:
- 171-1969
- Tillv. art.nr:
- BSC040N08NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | BSC040N08NS5 | |
| Package Type | TDSON | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Forward Voltage Vf | 0.88V | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 5.49mm | |
| Width | 6.35 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series BSC040N08NS5 | ||
Package Type TDSON | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Forward Voltage Vf 0.88V | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 5.49mm | ||
Width 6.35 mm | ||
Automotive Standard No | ||
The Infineon BSC040N08NS5 OptiMOS 5 80 V power MOSFET, especially designed for synchronous rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter.
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
Low voltage overshoot
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