Infineon BSC070N10NS5 Type N-Channel MOSFET, 80 A, 80 V Enhancement, 8-Pin TDSON BSC070N10NS5ATMA1
- RS-artikelnummer:
- 171-1963
- Tillv. art.nr:
- BSC070N10NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
112,96 kr
(exkl. moms)
141,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 4 200 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 40 | 11,296 kr | 112,96 kr |
| 50 - 90 | 9,037 kr | 90,37 kr |
| 100 - 240 | 8,472 kr | 84,72 kr |
| 250 - 490 | 7,907 kr | 79,07 kr |
| 500 + | 7,342 kr | 73,42 kr |
*vägledande pris
- RS-artikelnummer:
- 171-1963
- Tillv. art.nr:
- BSC070N10NS5ATMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TDSON | |
| Series | BSC070N10NS5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.2mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 30nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 83W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 150°C | |
| Length | 5.49mm | |
| Width | 6.35 mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TDSON | ||
Series BSC070N10NS5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.2mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 30nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 83W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 150°C | ||
Length 5.49mm | ||
Width 6.35 mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon BSC070N10NS5 is the 100V OptiMOS 5 power MOSFET in TOLL. This MOSFET is optimized for synchronous rectification and Ideal for high switching frequency. This MOSFET have highest system efficiency and reduced switching and conduction losses.
Optimized for high performance SMPS
100% avalanche tested
Superior thermal resistance
N-channel
relaterade länkar
- Infineon BSC070N10NS5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon BSC030N08NS5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon BSC040N08NS5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
- Infineon IAUC Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON IAUC100N08S5N031ATMA1
- Infineon BSC030N08NS5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC030N08NS5ATMA1
- Infineon BSC040N08NS5 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON BSC040N08NS5ATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 80 V Enhancement, 8-Pin TDSON
