Infineon IPD053N08N3 G Type N-Channel MOSFET, 90 A, 80 V Enhancement, 5-Pin TO-252

RS-artikelnummer:: 170-2283
Tillv. art.nr:: IPD053N08N3GATMA1
Tillverkare / varumärke:: Infineon

Infineon IPD053N08N3 G Type N-Channel MOSFET, 90 A, 80 V Enhancement, 5-Pin TO-252

Antal (1 rulle med 2500 enheter)*

23 450,00 kr

(exkl. moms)

29 300,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

7 500 enhet(er) är redo att levereras

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet	Per rulle*
2500 +	9,38 kr	23 450,00 kr

*vägledande pris

RS-artikelnummer:: 170-2283
Tillv. art.nr:: IPD053N08N3GATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	90A
	Maximum Drain Source Voltage Vds	80V
	Series	IPD053N08N3 G
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	9.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	150W
	Typical Gate Charge Qg @ Vgs	52nC
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Height	2.41mm
	Length	6.73mm
	Standards/Approvals	No
	Width	7.36 mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 90A
	Maximum Drain Source Voltage Vds 80V
	Series IPD053N08N3 G
	Package Type TO-252
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 9.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 150W
	Typical Gate Charge Qg @ Vgs 52nC
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Height 2.41mm
	Length 6.73mm
	Standards/Approvals No
	Width 7.36 mm
	Automotive Standard No

RoHS-status: Inte relevant

Infineon MOSFET

The Infineon TO-252-3 surface mount N-channel MOSFET is a new age product with a drain-source resistance of 5.3mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 90A. It has a maximum gate-source voltage of 20V and drain-source voltage of 80V. It has a maximum power dissipation of 150W. The MOSFET has a minimum and a maximum driving voltage of 6V and 10V respectively. It has been optimized for lower switching and conduction losses. The MOSFET tackles the most challenging applications giving full flexibility in limited spaces. It is designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Dual sided cooling

• Excellent gate charge x RDS (ON) product (FOM)

• Lead (Pb) free plating

• Low parasitic inductance

• Low profile (<0, 7mm)

• Operating temperature ranges between -55°C and 175°C

• Optimized technology for DC-DC converters

• Superior thermal resistance

Applications

• AC-DC

• Adapter

• DC-DC

• LED

• Motor control

• PC power

• Server power supplies

• SMPS

• Solar

• Telecommunication

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC61249-2-21

• JEDEC