Infineon HEXFET Type N-Channel MOSFET, 128 A, 75 V Enhancement, 3-Pin TO-263

Mängdrabatt möjlig

Antal (1 rulle med 800 enheter)*

12 580,00 kr

(exkl. moms)

15 724,80 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • 800 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
800 - 80015,725 kr12 580,00 kr
1600 +14,939 kr11 951,20 kr

*vägledande pris

RS-artikelnummer:
168-6010
Tillv. art.nr:
IRFS3307ZTRLPBF
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

128A

Maximum Drain Source Voltage Vds

75V

Package Type

TO-263

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5.8mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

230W

Typical Gate Charge Qg @ Vgs

79nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.67mm

Width

9.65 mm

Height

4.83mm

Standards/Approvals

No

Automotive Standard

No

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

relaterade länkar