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STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-247

RS-artikelnummer:: 168-5899
Tillv. art.nr:: STW35N60DM2
Tillverkare / varumärke:: STMicroelectronics

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-247

Mängdrabatt möjlig

Antal (1 rör med 30 enheter)*

1 300,62 kr

(exkl. moms)

1 625,76 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Lagerinformation är för närvarande otillgänglig

Enheter	Per enhet	Per Rør*
30 - 30	43,354 kr	1 300,62 kr
60 - 120	42,243 kr	1 267,29 kr
150 +	41,187 kr	1 235,61 kr

*vägledande pris

RS-artikelnummer:: 168-5899
Tillv. art.nr:: STW35N60DM2
Tillverkare / varumärke:: STMicroelectronics

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Välj alla	Attribut	Värde
	Brand	STMicroelectronics
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	28A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-247
	Series	MDmesh DM2
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	110mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	210W
	Forward Voltage Vf	-6.3V
	Typical Gate Charge Qg @ Vgs	54nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Height	20.15mm
	Standards/Approvals	No
	Length	15.75mm
	Width	5.15 mm
	Automotive Standard	No

	Välj alla
	Brand STMicroelectronics
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 28A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-247
	Series MDmesh DM2
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 110mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 210W
	Forward Voltage Vf -6.3V
	Typical Gate Charge Qg @ Vgs 54nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Height 20.15mm
	Standards/Approvals No
	Length 15.75mm
	Width 5.15 mm
	Automotive Standard No

COO (Country of Origin):: CN

N-Channel MDmesh DM2 Series, STMicroelectronics

The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.

High dV/dt capability for improved system reliability

AEC-Q101 qualified

STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 28 A, 600 V Enhancement, 3-Pin TO-247

GRATIS leverans för online beställningar över 500,00 kr

N-Channel MDmesh DM2 Series, STMicroelectronics

MOSFET Transistors, STMicroelectronics

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