onsemi PowerTrench N-Channel MOSFET, 1.4 A, 30 V, 3-Pin SOT-23 FDN361BN
- RS-artikelnummer:
- 166-1642
- Tillv. art.nr:
- FDN361BN
- Tillverkare / varumärke:
- onsemi
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RS kommer inte längre att lagerföra denna produkt.
- RS-artikelnummer:
- 166-1642
- Tillv. art.nr:
- FDN361BN
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 460 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 1.3 nC @ 4.5 V | |
| Length | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Width | 2.92mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.94mm | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.4 A | ||
Maximum Drain Source Voltage 30 V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 460 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 1.3 nC @ 4.5 V | ||
Length 1.4mm | ||
Number of Elements per Chip 1 | ||
Width 2.92mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 0.94mm | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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