Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

RS-artikelnummer:: 165-8742
Tillv. art.nr:: DMN2014LHAB-7
Tillverkare / varumärke:: DiodesZetex

Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

2950 I lager för avsändande samma dag

Pris (ex. moms) Var (i en rulle med 3000)

1,895 kr

(exkl. moms)

2,369 kr

(inkl. moms)

Enheter	Per enhet	Per rulle*
3000 +	1,895 kr	5 685,00 kr

RS-artikelnummer:: 165-8742
Tillv. art.nr:: DMN2014LHAB-7
Tillverkare / varumärke:: DiodesZetex

DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	9.3 A
Maximum Drain Source Voltage	20 V
Package Type	U-DFN2030
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	28 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.1V
Maximum Power Dissipation	1.7 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Width	2.05mm
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	16 nC @ 4.5 V
Length	3.05mm
Transistor Material	Si
Minimum Operating Temperature	-55 °C
Height	0.6mm

Dual N-Channel MOSFET, 9.3 A, 20 V, 6-Pin U-DFN2030 Diodes Inc DMN2014LHAB-7

Dual N-Channel MOSFET, Diodes Inc.