Infineon HEXFET Type N-Channel MOSFET, 127 A, 100 V Enhancement, 3-Pin TO-263

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11 732,80 kr

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14 665,60 kr

(inkl. moms)

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RS-artikelnummer:
165-8292
Tillv. art.nr:
IRFS4310ZTRLPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

127A

Maximum Drain Source Voltage Vds

100V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

250W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

120nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Height

4.83mm

Length

10.67mm

Width

11.3 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

N-Channel Power MOSFET 100V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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