Nexperia BUK9Y7R640E Type N-Channel MOSFET, 79 A, 40 V Enhancement, 5-Pin LFPAK BUK9Y7R6-40E,115
- RS-artikelnummer:
- 153-2862
- Tillv. art.nr:
- BUK9Y7R6-40E,115
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 förpackning med 25 enheter)*
202,50 kr
(exkl. moms)
253,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 06 juli 2026
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 25 - 100 | 8,10 kr | 202,50 kr |
| 125 - 225 | 5,833 kr | 145,83 kr |
| 250 - 600 | 5,681 kr | 142,03 kr |
| 625 - 1225 | 5,533 kr | 138,33 kr |
| 1250 + | 5,398 kr | 134,95 kr |
*vägledande pris
- RS-artikelnummer:
- 153-2862
- Tillv. art.nr:
- BUK9Y7R6-40E,115
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 79A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | BUK9Y7R640E | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 15.28mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 5.5nC | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 95W | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Width | 4.1 mm | |
| Height | 1.05mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 79A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series BUK9Y7R640E | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 15.28mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 5.5nC | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 95W | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Standards/Approvals No | ||
Width 4.1 mm | ||
Height 1.05mm | ||
Automotive Standard AEC-Q101 | ||
N-channel 40 V, 7.6 mΩ logic level MOSFET in LFPAK56, Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5 V at 175 °C
12 V Automotive systems
Motors, lamps and solenoid control
Transmission control
Ultra high performance power switching
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