Nexperia Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 4-Pin DFN

RS-artikelnummer:: 153-0731
Tillv. art.nr:: PMXB56ENZ
Tillverkare / varumärke:: Nexperia

Nexperia Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 4-Pin DFN

Antal (1 rulle med 5000 enheter)*

5 605,00 kr

(exkl. moms)

7 005,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 06 juli 2026

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Enheter	Per enhet	Per rulle*
5000 +	1,121 kr	5 605,00 kr

*vägledande pris

RS-artikelnummer:: 153-0731
Tillv. art.nr:: PMXB56ENZ
Tillverkare / varumärke:: Nexperia

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Nexperia
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.2A
	Maximum Drain Source Voltage Vds	30V
	Package Type	DFN
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	87mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3.6nC
	Maximum Power Dissipation Pd	8.33W
	Maximum Operating Temperature	150°C
	Width	1.05 mm
	Standards/Approvals	No
	Length	1.15mm
	Height	0.36mm
	Automotive Standard	No

	Välj alla
	Brand Nexperia
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.2A
	Maximum Drain Source Voltage Vds 30V
	Package Type DFN
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 87mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3.6nC
	Maximum Power Dissipation Pd 8.33W
	Maximum Operating Temperature 150°C
	Width 1.05 mm
	Standards/Approvals No
	Length 1.15mm
	Height 0.36mm
	Automotive Standard No

N-channel MOSFETs 25 V - 30 V, Robust performance thanks to Advanced technology know-how, Easy-to-use MOSFETs in the 25 V to 30 V range. Perfect for space- and power-critical applications, they offer excellent switching performance and class-leading safe operating area (SOA). Need a different voltage rating? Check out the rest of our huge portfolio for more options.

30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

Very low Drain-Source on-state resistance RDSon = 49 mΩ

Very fast switching

Low-side load switch and charging switch for portable devices

Power management in battery-driven portables

LED driver

DC-to-DC converters

Nexperia Type N-Channel MOSFET, 3.2 A, 30 V Enhancement, 4-Pin DFN

GRATIS leverans för online beställningar över 500,00 kr

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