Nexperia Type P-Channel MOSFET, -2.9 A, -20 V Enhancement, 4-Pin DFN

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Antal (1 rulle med 5000 enheter)*

4 340,00 kr

(exkl. moms)

5 425,00 kr

(inkl. moms)

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  • 5 000 enhet(er) levereras från den 12 maj 2026
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5000 +0,868 kr4 340,00 kr

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RS-artikelnummer:
153-0723
Tillv. art.nr:
PMXB75UPEZ
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

-2.9A

Maximum Drain Source Voltage Vds

-20V

Package Type

DFN

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

950mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

8.33W

Typical Gate Charge Qg @ Vgs

6.8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

0.36mm

Width

1.05 mm

Length

1.15mm

Automotive Standard

No

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection 1.5 kV HBM

Drain-source on-state resistance RDSon = 69 mΩ

Very low gate-source threshold voltage for portable applications VGS(th) = -0.68 V

High-side load switch and charging switch for portable devices

Power management in battery driven portables

LED driver

DC-to-DC converter

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