Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ

RS-artikelnummer:: 152-8344
Tillv. art.nr:: PMDXB950UPELZ
Tillverkare / varumärke:: Nexperia

Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ

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72,575 kr

(exkl. moms)

90,725 kr

(inkl. moms)

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Enheter	Per enhet	Per förpackning*
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RS-artikelnummer:: 152-8344
Tillv. art.nr:: PMDXB950UPELZ
Tillverkare / varumärke:: Nexperia

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Nexperia
	Product Type	Trench MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	500mA
	Maximum Drain Source Voltage Vds	-20V
	Series	Trench MOSFET
	Package Type	DFN
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	3.5Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	1.19nC
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	4025mW
	Minimum Operating Temperature	150°C
	Transistor Configuration	Dual
	Maximum Operating Temperature	-55°C
	Width	1.05 mm
	Height	0.36mm
	Standards/Approvals	No
	Length	1.15mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Välj alla
	Brand Nexperia
	Product Type Trench MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 500mA
	Maximum Drain Source Voltage Vds -20V
	Series Trench MOSFET
	Package Type DFN
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 3.5Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 1.19nC
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 4025mW
	Minimum Operating Temperature 150°C
	Transistor Configuration Dual
	Maximum Operating Temperature -55°C
	Width 1.05 mm
	Height 0.36mm
	Standards/Approvals No
	Length 1.15mm
	Number of Elements per Chip 2
	Automotive Standard No

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

20 V, dual P-channel Trench MOSFET, Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low leakage current

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Drain-source on-state resistance RDSon = 1.02 Ω

Relay driver

High-speed line driver

High-side load switch

Switching circuits

Nexperia Dual Trench MOSFET 2 Type P-Channel Trench MOSFET, 500 mA, -20 V Enhancement, 8-Pin DFN PMDXB950UPELZ

GRATIS leverans för online beställningar över 500,00 kr

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