Vishay Si2374DS Type N-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2374DS-T1-GE3
- RS-artikelnummer:
- 152-6360
- Tillv. art.nr:
- SI2374DS-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 50 enheter)*
106,20 kr
(exkl. moms)
132,75 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 1 250 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 50 - 200 | 2,124 kr | 106,20 kr |
| 250 - 450 | 1,487 kr | 74,35 kr |
| 500 - 1200 | 1,317 kr | 65,85 kr |
| 1250 - 2450 | 1,086 kr | 54,30 kr |
| 2500 + | 1,06 kr | 53,00 kr |
*vägledande pris
- RS-artikelnummer:
- 152-6360
- Tillv. art.nr:
- SI2374DS-T1-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 5.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | Si2374DS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.041Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±8 V | |
| Maximum Power Dissipation Pd | 1.7W | |
| Typical Gate Charge Qg @ Vgs | 7.7nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Length | 3.04mm | |
| Standards/Approvals | Lead (Pb)-Free | |
| Height | 1.02mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 5.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series Si2374DS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.041Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±8 V | ||
Maximum Power Dissipation Pd 1.7W | ||
Typical Gate Charge Qg @ Vgs 7.7nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Length 3.04mm | ||
Standards/Approvals Lead (Pb)-Free | ||
Height 1.02mm | ||
Automotive Standard No | ||
TrenchFET® power MOSFET
Material categorization:
APPLICATIONS
Load switch
Power management
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