Nexperia Type N-Channel MOSFET, 3.1 A, 60 V Enhancement, 3-Pin SOT-23 PMV55ENEAR

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108,30 kr

(exkl. moms)

135,375 kr

(inkl. moms)

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  • Dessutom levereras 400 enhet(er) från den 05 januari 2026
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Enheter
Per enhet
Per förpackning*
25 - 2254,332 kr108,30 kr
250 - 6002,356 kr58,90 kr
625 - 12252,289 kr57,23 kr
1250 - 24752,24 kr56,00 kr
2500 +2,177 kr54,43 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
151-3187
Tillv. art.nr:
PMV55ENEAR
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

12.7nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

8.36W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1mm

Width

1.4 mm

Standards/Approvals

No

Length

3mm

Automotive Standard

AEC-Q101

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175°C rating

60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

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