Nexperia Type N-Channel MOSFET, 5.5 A, 30 V Enhancement, 3-Pin SOT-23 PMV25ENEAR

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125,00 kr

(exkl. moms)

156,25 kr

(inkl. moms)

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Enheter
Per enhet
Per förpackning*
25 - 2255,00 kr125,00 kr
250 - 6002,858 kr71,45 kr
625 - 12252,527 kr63,18 kr
1250 - 24752,213 kr55,33 kr
2500 +2,088 kr52,20 kr

*vägledande pris

Förpackningsalternativ:
RS-artikelnummer:
151-3122
Tillv. art.nr:
PMV25ENEAR
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5.5A

Maximum Drain Source Voltage Vds

30V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

39mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

6.94W

Typical Gate Charge Qg @ Vgs

12.6nC

Maximum Operating Temperature

150°C

Length

3mm

Standards/Approvals

No

Width

1.4 mm

Height

1.1mm

Automotive Standard

AEC-Q101

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175°C rating

30 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Low threshold voltage

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

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