Nexperia Type N-Channel MOSFET, 600 mA, 20 V Enhancement, 8-Pin DFN

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13 025,00 kr

(exkl. moms)

16 280,00 kr

(inkl. moms)

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RS-artikelnummer:
151-3049
Tillv. art.nr:
PMDXB600UNEZ
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

600mA

Maximum Drain Source Voltage Vds

20V

Package Type

DFN

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

4.03W

Typical Gate Charge Qg @ Vgs

0.4nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

1.15mm

Width

1.05 mm

Height

0.4mm

Automotive Standard

No

N-channel MOSFETs ≤ 20 V, Get the optimum switching solutions for your portable designs, Choose from a wide range of single and dual N-channel MOSFETs up to 20 V. Great reliability due to our trusted TrenchMOS and package technologies. Easy-to-use, our low voltage MOSFETs are designed specifically to meet the demands of portable applications with low drive voltages.

20 V, dual N-channel Trench MOSFET, Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Leadless ultra small and ultra thin SMD plastic package: 1.1 x 1.0 x 0.37 mm

Exposed drain pad for excellent thermal conduction

ElectroStatic Discharge (ESD) protection > 1 kV HBM

Drain-source on-state resistance RDSon = 470 mΩ

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