ROHM RE1C002ZP Type N-Channel MOSFET, 250 mA, 60 V Enhancement, 3-Pin SOT-416 RE1L002SNTL
- RS-artikelnummer:
- 148-6962
- Tillv. art.nr:
- RE1L002SNTL
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 förpackning med 200 enheter)*
218,80 kr
(exkl. moms)
273,60 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 27 april 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 200 - 200 | 1,094 kr | 218,80 kr |
| 400 - 800 | 1,021 kr | 204,20 kr |
| 1000 - 1800 | 0,965 kr | 193,00 kr |
| 2000 - 9800 | 0,811 kr | 162,20 kr |
| 10000 + | 0,786 kr | 157,20 kr |
*vägledande pris
- RS-artikelnummer:
- 148-6962
- Tillv. art.nr:
- RE1L002SNTL
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 250mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-416 | |
| Series | RE1C002ZP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 150mW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.8mm | |
| Length | 1.7mm | |
| Width | 0.96 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 250mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-416 | ||
Series RE1C002ZP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 150mW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 0.8mm | ||
Length 1.7mm | ||
Width 0.96 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Low voltage(12V) drive type
Pch Small-signal MOSFET
Small Surface Mount Package
Pb Free/RoHS Compliant
relaterade länkar
- ROHM RE1C002ZP Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-416 RE1L002SNTL
- ROHM RE1E002SP Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-416
- ROHM RSM002N06 Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-723 RSM002N06T2L
- ROHM RE1E002SP Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-416 RE1E002SPTCL
- ROHM RE1C001ZP Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-416 RE1C001ZPTL
- ROHM RE1C002UN Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-416 RE1C002UNTCL
- ROHM RE1C002ZP Type P-Channel MOSFET 20 V Enhancement, 3-Pin SC-75 RE1C002ZPTL
- ROHM BSS Type N-Channel MOSFET 3-Pin SOT-323 BSS138WAHZGT106
