Infineon SIPMOS® P-Channel MOSFET, 15 A, 100 V, 3-Pin TO-220 SPP15P10PHXKSA1

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RS-artikelnummer:
145-9743
Tillv. art.nr:
SPP15P10PHXKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

15 A

Maximum Drain Source Voltage

100 V

Package Type

TO-220

Series

SIPMOS®

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

240 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

128 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

37 nC @ 10 V

Length

10.36mm

Number of Elements per Chip

1

Width

4.57mm

Height

15.95mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.35V

COO (Country of Origin):
MY

Infineon SIPMOS® P-Channel MOSFETs


The Infineon SIPMOS® small Signal P- channel MOSFETs have several features which may include enhancement mode, continuous drain current some as low as -80A plus a wide operating temperature range. The SIPMOS Power transistor can be used in a variety of applications including Telecom, eMobility, Notebooks, DC/DC devices as well as the automotive industry.

· AEC Q101 Qualified (Please refer to datasheet)
· Pb-free lead plating, RoHS compliant


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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