Infineon HEXFET N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB AUIRF2907Z
- RS-artikelnummer:
- 145-9614
- Tillv. art.nr:
- AUIRF2907Z
- Tillverkare / varumärke:
- Infineon
Inte tillgänglig
RS kommer inte längre att lagerföra denna produkt.
- RS-artikelnummer:
- 145-9614
- Tillv. art.nr:
- AUIRF2907Z
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 75 A | |
| Maximum Drain Source Voltage | 75 V | |
| Package Type | TO-220AB | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V | |
| Width | 4.83mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Height | 16.51mm | |
| Minimum Operating Temperature | -55 °C | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 75 A | ||
Maximum Drain Source Voltage 75 V | ||
Package Type TO-220AB | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 180 nC @ 10 V | ||
Width 4.83mm | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Height 16.51mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MX
Automotive N-Channel Power MOSFET, Infineon
Infineon's comprehensive portfolio of AECQ-101 Automotive-qualified single die N-channel devices addresses a wide variety of power requirements in many applications. This range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
relaterade länkar
- Infineon HEXFET N-Channel MOSFET 75 V, 3-Pin TO-220AB AUIRFB3207
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4615PBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRF540NPBF
- Infineon HEXFET N-Channel MOSFET 100 V, 3-Pin TO-220AB IRFB4510PBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB23N15DPBF
- Infineon HEXFET N-Channel MOSFET 150 V, 3-Pin TO-220AB IRFB4115GPBF
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-220AB AUIRFZ44N
- Infineon HEXFET N-Channel MOSFET 55 V, 3-Pin TO-220AB AUIRL3705N
