Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-263

RS-artikelnummer:: 145-9486
Tillv. art.nr:: IPB081N06L3GATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-263

Mängdrabatt möjlig

Antal (1 rulle med 1000 enheter)*

7 721,00 kr

(exkl. moms)

9 651,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Tillfälligt slut

Leverans från den 25 maj 2026

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet	Per rulle*
1000 - 1000	7,721 kr	7 721,00 kr
2000 - 2000	7,335 kr	7 335,00 kr
3000 +	6,872 kr	6 872,00 kr

*vägledande pris

RS-artikelnummer:: 145-9486
Tillv. art.nr:: IPB081N06L3GATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	50A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-263
	Series	OptiMOS 3
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	8.1mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	79W
	Typical Gate Charge Qg @ Vgs	22nC
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.31mm
	Height	4.57mm
	Width	9.45 mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 50A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-263
	Series OptiMOS 3
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 8.1mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 79W
	Typical Gate Charge Qg @ Vgs 22nC
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.31mm
	Height 4.57mm
	Width 9.45 mm
	Automotive Standard No

RoHS-status: Inte relevant

COO (Country of Origin):: CN

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Infineon OptiMOS 3 Type N-Channel MOSFET, 50 A, 60 V Enhancement, 3-Pin TO-263

GRATIS leverans för online beställningar över 500,00 kr

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V

MOSFET Transistors, Infineon

relaterade länkar