Infineon OptiMOS 3 Type N-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-220 IPP052N06L3GXKSA1

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625,15 kr

(exkl. moms)

781,45 kr

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50 - 5012,503 kr625,15 kr
100 - 20010,127 kr506,35 kr
250 - 4509,378 kr468,90 kr
500 - 9508,878 kr443,90 kr
1000 +8,127 kr406,35 kr

*vägledande pris

RS-artikelnummer:
145-9265
Tillv. art.nr:
IPP052N06L3GXKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

60V

Series

OptiMOS 3

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

115W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

37nC

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Length

10.36mm

Height

15.95mm

Width

4.57 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
CN

Infineon OptiMOS™3 Power MOSFETs, 60 to 80V


OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS

Optimized technology for DC/DC converters

Qualified according to JEDEC1) for target applications

N-channel, logic level

Excellent gate charge x R DS(on) product (FOM)

Very low on-resistance R DS(on)

Pb-free plating

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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