Infineon CoolMOS CE Type N-Channel MOSFET, 10.3 A, 600 V Enhancement, 3-Pin TO-220FP IPAW60R600CEXKSA1

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RS-artikelnummer:
133-9867
Tillv. art.nr:
IPAW60R600CEXKSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

10.3A

Maximum Drain Source Voltage Vds

600V

Series

CoolMOS CE

Package Type

TO-220FP

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.6Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

28W

Typical Gate Charge Qg @ Vgs

20.5nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Maximum Operating Temperature

150°C

Length

11.3mm

Standards/Approvals

No

Width

4.9 mm

Height

16.27mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon CoolMOS™ CE Power MOSFET


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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