Infineon CoolMOS™ CE N-Channel MOSFET, 8.4 A, 650 V, 3-Pin DPAK IPD60R800CEAUMA1

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RS-artikelnummer:
130-0902
Tillv. art.nr:
IPD60R800CEAUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

8.4 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS™ CE

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

800 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

74 W

Maximum Gate Source Voltage

-30 V, +30 V

Length

6.73mm

Typical Gate Charge @ Vgs

17.2 nC @ 10 V

Number of Elements per Chip

1

Width

6.22mm

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-40 °C

Height

2.41mm

Forward Diode Voltage

0.9V

Infineon CoolMOS™ CE Power MOSFET



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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