Sök efter MPN

Wolfspeed C3M Type N-Channel MOSFET, 35 A, 1 kV Enhancement, 4-Pin TO-247 C3M0065100K

RS-artikelnummer:: 125-3453
Tillv. art.nr:: C3M0065100K
Tillverkare / varumärke:: Wolfspeed

Wolfspeed C3M Type N-Channel MOSFET, 35 A, 1 kV Enhancement, 4-Pin TO-247 C3M0065100K

Mängdrabatt möjlig

Antal (1 enhet)*

226,58 kr

(exkl. moms)

283,22 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

Sista RS lager

Dessutom levereras 5 enhet(er) från den 29 december 2025
Sista 1 233 enhet(er) levereras från den 05 januari 2026

Enheter	Per enhet
1 - 24	226,58 kr
25 - 74	206,86 kr
75 - 149	201,15 kr
150 +	196,45 kr

*vägledande pris

RS-artikelnummer:: 125-3453
Tillv. art.nr:: C3M0065100K
Tillverkare / varumärke:: Wolfspeed

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Wolfspeed
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	35A
	Maximum Drain Source Voltage Vds	1kV
	Series	C3M
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	90mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	113.5W
	Maximum Gate Source Voltage Vgs	19 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	35nC
	Forward Voltage Vf	4.5V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	23.6mm
	Length	16.13mm
	Width	5.21 mm
	Automotive Standard	No

	Välj alla
	Brand Wolfspeed
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 35A
	Maximum Drain Source Voltage Vds 1kV
	Series C3M
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 90mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 113.5W
	Maximum Gate Source Voltage Vgs 19 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 35nC
	Forward Voltage Vf 4.5V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 23.6mm
	Length 16.13mm
	Width 5.21 mm
	Automotive Standard No

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

New C3M Silicon Carbide (SiC) MOSFET technology

Minimum of 1000 V Drain-Source Breakdown Voltage across the entire operating temperature range

New low-impedance package with driver source

8 mm of creepage/clearance between Drain and Source

High-speed switching with low output capacitance

High blocking voltage with low Drain-Source On-State Resistance

Avalanche ruggedness

Fast intrinsic diode with low Reverse Recovery

Wolfspeed C3M Type N-Channel MOSFET, 35 A, 1 kV Enhancement, 4-Pin TO-247 C3M0065100K

GRATIS leverans för online beställningar över 500,00 kr

Silicon Carbide Power MOSFET, C3M Series, Cree Inc.

MOSFET Transistors, Cree Inc.

relaterade länkar