ROHM AG191FLD3HRB Type N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL) AG191FLD3HRBTL

RS-artikelnummer:: 687-454
Tillv. art.nr:: AG191FLD3HRBTL
Tillverkare / varumärke:: ROHM

ROHM AG191FLD3HRB Type N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL) AG191FLD3HRBTL

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Antal (1 längd med 2 enheter)*

22,40 kr

(exkl. moms)

28,00 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Enheter	Per enhet	Per Längd*
2 - 18	11,20 kr	22,40 kr
20 - 48	9,89 kr	19,78 kr
50 - 198	8,845 kr	17,69 kr
200 - 998	7,14 kr	14,28 kr
1000 +	7,01 kr	14,02 kr

*vägledande pris

RS-artikelnummer:: 687-454
Tillv. art.nr:: AG191FLD3HRBTL
Tillverkare / varumärke:: ROHM

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Continuous Drain Current Id	80A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252 (TL)
	Series	AG191FLD3HRB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.6mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	76W
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Operating Temperature	175°C
	Width	6.80 mm
	Length	10.50mm
	Standards/Approvals	RoHS, AEC-Q101
	Height	2.3mm
	Automotive Standard	AEC-Q101

	Välj alla
	Brand ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Continuous Drain Current Id 80A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252 (TL)
	Series AG191FLD3HRB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.6mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 76W
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Operating Temperature 175°C
	Width 6.80 mm
	Length 10.50mm
	Standards/Approvals RoHS, AEC-Q101
	Height 2.3mm
	Automotive Standard AEC-Q101

Datasheet - AG191FLD3HRBTL

The ROHM Power MOSFET is engineered for high-performance applications, providing exceptional efficiency with a maximum Drain-Source voltage of 60V and a continuous drain current of 80A. Designed for demanding automotive systems, this device features low on-resistance, ensuring reduced power loss and enhanced thermal management. Its robust construction includes AEC-Q101 qualification, making it suitable for use in rigorous automotive environments. With a multidimensional thermal resistance capability, this MOSFET effectively handles thermal stress, ensuring reliability under varying operational conditions. Ideal for engineers seeking a reliable component in high-efficiency applications, the AG191FLD3HRB stands out for its performance and operational integrity.

Low on resistance offers improved efficiency and reduces heat generation

Pb free plating conforms to RoHS standards for environmental safety

100% avalanche testing guarantees reliable performance under stress

AEC Q101 qualified, ensuring compliance with automotive industry standards

Supports a wide operating junction and storage temperature range from -55°C to 175°C

Flexible packaging specifications with tape and reel format for convenience in assembly

Integrated thermal resistance minimizes thermal concerns during operation

Supplied with precise gate charge characteristics for optimal switching performance

ROHM AG191FLD3HRB Type N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL) AG191FLD3HRBTL

GRATIS leverans för online beställningar över 500,00 kr

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