ROHM RJ1N04BBHT Type N-Channel Single MOSFETs, 80 V Enhancement, 3-Pin TO-263AB-3LSHYAD RJ1N04BBHTL1
- RS-artikelnummer:
- 687-400
- Tillv. art.nr:
- RJ1N04BBHTL1
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 längd med 2 enheter)*
86,02 kr
(exkl. moms)
107,52 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Leverans från den 20 januari 2026
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 2 - 18 | 43,01 kr | 86,02 kr |
| 20 - 98 | 37,91 kr | 75,82 kr |
| 100 - 198 | 33,99 kr | 67,98 kr |
| 200 + | 26,77 kr | 53,54 kr |
*vägledande pris
- RS-artikelnummer:
- 687-400
- Tillv. art.nr:
- RJ1N04BBHTL1
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | TO-263AB-3LSHYAD | |
| Series | RJ1N04BBHT | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Power Dissipation Pd | 89W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 10.36 mm | |
| Height | 4.77mm | |
| Length | 15.5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type TO-263AB-3LSHYAD | ||
Series RJ1N04BBHT | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Power Dissipation Pd 89W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 10.36 mm | ||
Height 4.77mm | ||
Length 15.5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The ROHM N channel power MOSFET designed to deliver outstanding efficiency in demanding applications. With a maximal drain-source voltage of 80V and a continuous drain current of 100A, it is tailored for effective switching tasks in a variety of circuits, making it ideal for motor drives and DC/DC converters. Its low on-resistance of 5.3mΩ ensures that energy loss is minimised, resulting in better thermal management and reliable operation under high-power conditions. Compliant with RoHS standards, this device not only meets environmental requirements but also assures high reliability and safety for end-users in diverse electronics.
Low on resistance for effective power management and reduced thermal load
Capable of handling continuous drain currents of ±100A, ideal for high-performance designs
Comprehensive testing for robustness, including 100% Rg and UIS testing
Pb free plating ensures compliance with international environmental standards
Halogen-free construction contributes to environmental sustainability
Robust packaging specifications, including embossed tape for dependable transport and storage
Operating temperature range from -55 to +150°C provides operational flexibility across diverse environments
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