ROHM SCT4036KWA Type N-Channel Single MOSFETs, 40 A, 1200 V Enhancement, 8-Pin TO-263-7LA SCT4036KWATL
- RS-artikelnummer:
- 687-344
- Tillv. art.nr:
- SCT4036KWATL
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 längd med 2 enheter)*
260,69 kr
(exkl. moms)
325,862 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 19 januari 2026
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 2 - 8 | 130,345 kr | 260,69 kr |
| 10 + | 126,48 kr | 252,96 kr |
*vägledande pris
- RS-artikelnummer:
- 687-344
- Tillv. art.nr:
- SCT4036KWATL
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT4036KWA | |
| Package Type | TO-263-7LA | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 36mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 21 V | |
| Typical Gate Charge Qg @ Vgs | 91nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.5mm | |
| Width | 10.2 mm | |
| Standards/Approvals | RoHS | |
| Length | 15.4mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT4036KWA | ||
Package Type TO-263-7LA | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 36mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 21 V | ||
Typical Gate Charge Qg @ Vgs 91nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 150°C | ||
Height 4.5mm | ||
Width 10.2 mm | ||
Standards/Approvals RoHS | ||
Length 15.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- TH
The ROHM N channel SiC power MOSFET, engineered for high-performance applications requiring efficient switching capabilities. With a maximum drain-source voltage of 1200V and a typical on-resistance of 36mΩ, this device excels in demanding environments like solar inverters and DC/DC converters. Its robust design features a high continuous drain current rating of 40A at 25°C, supporting versatility in various applications. The device is optimised for fast switching, providing enhanced efficiency. Additionally, its Pb-free lead plating complies with RoHS standards, ensuring an eco-friendly approach without compromising on performance.
Delivers low on resistance for minimal power loss during operation
Supports a wide range of continuous and pulsed drain currents for enhanced flexibility in design
Optimised for fast switching speeds, contributing to improved overall efficiency
Features robust thermal resistance capabilities, allowing for reliable operation at elevated temperatures
Incorporates a simple gate drive design, facilitating easier integration into existing systems
Compliant with environmental regulations through Pb free lead plating, aligning with contemporary sustainability practices
Offers a wide creepage distance of 4.7mm, enhancing reliability in high-voltage applications
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