Vishay SIR5812DP Type N-Channel Single MOSFETs, 45.3 A, 80 V Enhancement, 8-Pin PowerPAK SIR5812DP-T1-RE3

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14 280,00 kr

(exkl. moms)

17 850,00 kr

(inkl. moms)

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3000 +4,76 kr14 280,00 kr

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RS-artikelnummer:
653-197
Tillv. art.nr:
SIR5812DP-T1-RE3
Tillverkare / varumärke:
Vishay
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Brand

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

45.3A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK

Series

SIR5812DP

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.0135Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

7.5nC

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

50W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

5.15mm

Width

6.15 mm

Height

1.04mm

Automotive Standard

No

COO (Country of Origin):
CN
The Vishay TrenchFET Gen V N-Channel Power MOSFET rated for 80 V drain-source voltage. Packaged in a PowerPAK SO-8, it's Ideal for DC/DC converters, synchronous rectification, motor control, and hot swap switching.

Pb Free

Halogen free

RoHS compliant

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