Vishay SUM50010EL Type N-Channel Single MOSFETs, 150 A, 60 V Enhancement, 3-Pin PowerPAK
- RS-artikelnummer:
- 653-151
- Tillv. art.nr:
- SUM50010EL-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
35,84 kr
(exkl. moms)
44,80 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 800 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Längd(er) | Per Längd |
|---|---|
| 1 - 9 | 35,84 kr |
| 10 - 24 | 34,83 kr |
| 25 - 99 | 34,05 kr |
| 100 - 499 | 29,01 kr |
| 500 + | 27,33 kr |
*vägledande pris
- RS-artikelnummer:
- 653-151
- Tillv. art.nr:
- SUM50010EL-GE3
- Tillverkare / varumärke:
- Vishay
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PowerPAK | |
| Series | SUM50010EL | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.00173Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 192nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PowerPAK | ||
Series SUM50010EL | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.00173Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 192nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay TrenchFET Gen IV N-Channel Power MOSFET rated for 60 V drain-source voltage. It features very low gate-drain charge (Qgd) to minimize power loss during switching and supports high current handling up to 150 A. Packaged in a D2PAK, it's Ideal for DC/DC converters, motor drives, battery management, and secondary synchronous rectification in power supplies2.
Pb Free
Halogen free
RoHS compliant
relaterade länkar
- Vishay SUM50010EL Type N-Channel Single MOSFETs 60 V Enhancement, 3-Pin PowerPAK SUM50010EL-GE3
- Vishay SIS5712DN Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIR5712DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK
- Vishay SIS5712DN Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIS5712DN-T1-GE3
- Vishay SIR5712DP Type N-Channel Single MOSFETs 150 V Enhancement, 8-Pin PowerPAK SIR5712DP-T1-GE3
- Vishay SUP50010EL Type N-Channel Single MOSFETs 60 V Enhancement, 3-Pin TO-220
- Vishay SUP50010EL Type N-Channel Single MOSFETs 60 V Enhancement, 3-Pin TO-220 SUP50010EL-GE3
- Vishay Si7164DP Type N-Channel Power MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8
