Microchip 2N6660 Type N-Channel Single MOSFETs, 410 mA, 60 V Enhancement, 3-Pin TO-39 2N6660

Mängdrabatt möjlig

Antal (1 enhet)*

221,31 kr

(exkl. moms)

276,64 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • 478 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
1 - 4221,31 kr
5 +214,82 kr

*vägledande pris

RS-artikelnummer:
649-369
Tillv. art.nr:
2N6660
Tillverkare / varumärke:
Microchip
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Microchip

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

410mA

Maximum Drain Source Voltage Vds

60V

Package Type

TO-39

Series

2N6660

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

6.25W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

Lead (Pb)-free/RoHS

Automotive Standard

No

COO (Country of Origin):
TH
The Microchip N-Channel, Enhancement-Mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon-gate manufacturing process. This com-binational produces a device with the power-handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low Ciss and fast switching speeds

Excellent thermal stability

Relaterade länkar