Microchip VN1206 N-Channel Vertical DMOS FET-Channel Single MOSFETs, 350 mA, 90 V Enhancement Mode, 3-Pin TO-92-3
- RS-artikelnummer:
- 598-908
- Tillv. art.nr:
- VN1206L-G
- Tillverkare / varumärke:
- Microchip
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Enheter | Per enhet | Per Påse* |
|---|---|---|
| 1000 + | 21,013 kr | 21 013,00 kr |
*vägledande pris
- RS-artikelnummer:
- 598-908
- Tillv. art.nr:
- VN1206L-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Product Type | Single MOSFETs | |
| Channel Type | N-Channel Vertical DMOS FET | |
| Maximum Continuous Drain Current Id | 350mA | |
| Maximum Drain Source Voltage Vds | 90V | |
| Package Type | TO-92-3 (TO-226AA) | |
| Series | VN1206 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.19 mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 5.33mm | |
| Length | 5.08mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Product Type Single MOSFETs | ||
Channel Type N-Channel Vertical DMOS FET | ||
Maximum Continuous Drain Current Id 350mA | ||
Maximum Drain Source Voltage Vds 90V | ||
Package Type TO-92-3 (TO-226AA) | ||
Series VN1206 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Width 4.19 mm | ||
Standards/Approvals RoHS Compliant | ||
Height 5.33mm | ||
Length 5.08mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Microchip N channel enhancement-mode vertical transistor utilizes a vertical double-diffused metal oxide semiconductor (DMOS) structure along with a well-proven silicon gate manufacturing process. This combination ensures the device is free from secondary breakdown and operates with a low power drive requirement, making it efficient and reliable for various applications.
Ease of paralleling
Low power drive requirement
High input impedance and high gain
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