Microchip N-Channel Vertical DMOS FET-Channel Single MOSFETs, 450 mA, 40 V Enhancement Mode, 3-Pin TO-92-3 (TO-226AA)

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RS-artikelnummer:
598-241
Tillv. art.nr:
TN5325N3-G
Tillverkare / varumärke:
Microchip
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Brand

Microchip

Channel Type

N-Channel Vertical DMOS FET

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

450mA

Maximum Drain Source Voltage Vds

40V

Package Type

TO-92-3 (TO-226AA)

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

1.8Ω

Channel Mode

Enhancement Mode

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Maximum Power Dissipation Pd

1W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Height

5.3mm

Width

4.2 mm

Length

4.2mm

Automotive Standard

No

The Microchip N channel enhancement-mode vertical transistor is a low-threshold, normally-off device that uses a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown.

Low threshold

High input impedance and high gain

Free from secondary breakdown

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