Infineon HEXFET Type N-Channel MOSFET, 160 A, 30 V Enhancement, 3-Pin IPAK IRLU8743PBF

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62,64 kr

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78,30 kr

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5 - 4512,528 kr62,64 kr
50 - 12011,312 kr56,56 kr
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250 - 4959,766 kr48,83 kr
500 +9,028 kr45,14 kr

*vägledande pris

RS-artikelnummer:
495-760
Tillv. art.nr:
IRLU8743PBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

160A

Maximum Drain Source Voltage Vds

30V

Package Type

IPAK

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

39nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

135W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

2.39 mm

Height

6.22mm

Length

6.73mm

Standards/Approvals

No

Automotive Standard

No

Distrelec Product Id

304-29-640

Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLU8743PBF


This MOSFET is an enhancement mode device designed for efficient switching applications. It utilises Advanced technology to perform well in high-frequency operations, making it suitable for power management in various industrial scenarios. With impressive specifications, it effectively manages significant current loads while maintaining low resistance, ensuring performance in various conditions.

Features & Benefits


• Low on-resistance reduces power loss during operation

• High continuous drain current of 160A supports substantial loads

• Voltage range up to 30V facilitates diverse applications

• Designed with an IPAK TO-251 package for straightforward installation

• Fully characterised avalanche capabilities enhance operational reliability

Applications


• High-frequency synchronous buck converters

• Isolated DC-DC converters in industrial environments

• Computer processor power management systems

• High current power supply

How does it perform in high-temperature environments?


The device operates within a temperature range of -55°C to +175°C, ensuring consistent performance in extreme conditions.

What is the significance of low RDS(on) for my design?


A low RDS(on) Value minimises conduction losses, promoting efficient energy use and effective thermal management, which is essential for high-current applications.

Can it be used in Pulse applications?


Yes, its design supports pulsed current handling, making it suitable for various applications requiring transient response.

What factors should I consider during installation?


It is important to ensure proper thermal management and verify compatibility with the circuit's voltage and current specifications to optimise performance.

Is there a need for additional components for gate control?


Incorporating gate drive circuits may be advantageous to enhance switching performance, especially in high-frequency applications.

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