Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

RS-artikelnummer:: 349-334
Tillv. art.nr:: IMZA65R015M2HXKSA1
Tillverkare / varumärke:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

Mängdrabatt möjlig

Antal (1 enhet)*

271,33 kr

(exkl. moms)

339,16 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

238 enhet(er) är redo att levereras

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet
1 - 9	271,33 kr
10 - 99	244,27 kr
100 +	225,23 kr

*vägledande pris

RS-artikelnummer:: 349-334
Tillv. art.nr:: IMZA65R015M2HXKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	103A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-TO247-4
	Series	CoolSiC
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	18mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Power Dissipation Pd	341W
	Typical Gate Charge Qg @ Vgs	79nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 103A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-TO247-4
	Series CoolSiC
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 18mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Power Dissipation Pd 341W
	Typical Gate Charge Qg @ Vgs 79nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMZA65R015M2HXKSA1

The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, delivering unparalleled performance, superior reliability, and ease of use. This advanced MOSFET enables cost effective, highly efficient, and simplified designs, addressing the ever growing needs of modern power systems and markets. It offers a powerful solution for achieving superior system efficiency in various applications, ensuring optimal performance in demanding environments.

Ultra low switching losses

Robust against parasitic turn on even with 0 V turn off gate voltage

Flexible driving voltage and compatible with bipolar driving scheme

Robust body diode operation under hard commutation events

The .XT interconnection technology for best in class thermal performance

Infineon CoolSiC Type N-Channel MOSFET, 103 A, 650 V Enhancement, 4-Pin PG-TO247-4 IMZA65R015M2HXKSA1

GRATIS leverans för online beställningar över 500,00 kr

relaterade länkar