Infineon CoolSiC Type N-Channel MOSFET, 38 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R050M2HXKSA1

RS-artikelnummer:: 349-066
Tillv. art.nr:: IMW65R050M2HXKSA1
Tillverkare / varumärke:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 38 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R050M2HXKSA1

Mängdrabatt möjlig

Antal (1 enhet)*

101,98 kr

(exkl. moms)

127,48 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 240 enhet(er) från den 29 december 2025

Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"

Enheter	Per enhet
1 - 9	101,98 kr
10 - 99	91,84 kr
100 - 499	84,67 kr
500 - 999	78,40 kr
1000 +	70,45 kr

*vägledande pris

RS-artikelnummer:: 349-066
Tillv. art.nr:: IMW65R050M2HXKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

Hitta liknande produkter genom att välja ett eller flera attribut.

Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	38A
	Maximum Drain Source Voltage Vds	650V
	Package Type	PG-TO-247
	Series	CoolSiC
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	62mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Power Dissipation Pd	153W
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 38A
	Maximum Drain Source Voltage Vds 650V
	Package Type PG-TO-247
	Series CoolSiC
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 62mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Power Dissipation Pd 153W
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMW65R050M2HXKSA1

The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and excellent ease of use. This MOSFET is designed to enable cost effective, highly efficient, and simplified designs, addressing the ever-growing demands of modern power systems and markets. It is an ideal solution for achieving high system efficiency in a wide range of applications, delivering reliable performance and superior functionality.

Ultra low switching losses

Robust against parasitic turn on even with 0 V turn off gate voltage

Flexible driving voltage and compatible with bipolar driving scheme

Robust body diode operation under hard commutation events

The .XT interconnection technology for best in class thermal performance

Infineon CoolSiC Type N-Channel MOSFET, 38 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R050M2HXKSA1

GRATIS leverans för online beställningar över 500,00 kr

relaterade länkar