Infineon CoolSiC Type N-Channel MOSFET, 38 A, 750 V Enhancement, 22-Pin PG-HDSOP-22 IMDQ75R140M1HXUMA1

RS-artikelnummer:: 349-046
Tillv. art.nr:: IMDQ75R140M1HXUMA1
Tillverkare / varumärke:: Infineon

Infineon CoolSiC Type N-Channel MOSFET, 38 A, 750 V Enhancement, 22-Pin PG-HDSOP-22 IMDQ75R140M1HXUMA1

Mängdrabatt möjlig

Antal (1 förpackning med 2 enheter)*

118,13 kr

(exkl. moms)

147,662 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

750 enhet(er) är redo att levereras

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Enheter	Per enhet	Per förpackning*
2 - 18	59,065 kr	118,13 kr
20 - 198	53,20 kr	106,40 kr
200 - 998	49,055 kr	98,11 kr
1000 - 1998	45,47 kr	90,94 kr
2000 +	40,77 kr	81,54 kr

*vägledande pris

RS-artikelnummer:: 349-046
Tillv. art.nr:: IMDQ75R140M1HXUMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	38A
	Maximum Drain Source Voltage Vds	750V
	Series	CoolSiC
	Package Type	PG-HDSOP-22
	Mount Type	Surface
	Pin Count	22
	Maximum Drain Source Resistance Rds	140mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Power Dissipation Pd	100W
	Maximum Gate Source Voltage Vgs	23 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 38A
	Maximum Drain Source Voltage Vds 750V
	Series CoolSiC
	Package Type PG-HDSOP-22
	Mount Type Surface
	Pin Count 22
	Maximum Drain Source Resistance Rds 140mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Power Dissipation Pd 100W
	Maximum Gate Source Voltage Vgs 23 V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMDQ75R140M1HXUMA1

COO (Country of Origin):: MY

The Infineon 750 V CoolSiC MOSFET G1 is built upon Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. This MOSFET is designed to withstand high temperature and harsh operating conditions, making it ideal for demanding applications. It enables the simplified and cost effective deployment of systems with high efficiency, meeting the evolving needs of power electronics in challenging environments.

Infineon proprietary die attach technology

Cutting edge top side cooling package

Driver source pin available

Enhanced robustness to withstand bus voltages beyond 500 V

Superior efficiency in hard switching

Higher switching frequency in soft switching topologies

Robustness against parasitic turn on for unipolar gate driving

Best in class thermal dissipation

Reduced switching losses through improved gate control

Infineon CoolSiC Type N-Channel MOSFET, 38 A, 750 V Enhancement, 22-Pin PG-HDSOP-22 IMDQ75R140M1HXUMA1

GRATIS leverans för online beställningar över 500,00 kr

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