Infineon CoolSiC Type N-Channel MOSFET, 47 A, 750 V Enhancement, 22-Pin PG-HDSOP-22 AIMDQ75R040M1HXUMA1
- RS-artikelnummer:
- 348-932
- Tillv. art.nr:
- AIMDQ75R040M1HXUMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
98,90 kr
(exkl. moms)
123,62 kr
(inkl. moms)
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- 750 enhet(er) är redo att levereras
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 98,90 kr |
| 10 - 99 | 88,93 kr |
| 100 - 499 | 82,10 kr |
| 500 - 999 | 76,16 kr |
| 1000 + | 68,32 kr |
*vägledande pris
- RS-artikelnummer:
- 348-932
- Tillv. art.nr:
- AIMDQ75R040M1HXUMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 47A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Package Type | PG-HDSOP-22 | |
| Series | CoolSiC | |
| Mount Type | Surface | |
| Pin Count | 22 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 211W | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 47A | ||
Maximum Drain Source Voltage Vds 750V | ||
Package Type PG-HDSOP-22 | ||
Series CoolSiC | ||
Mount Type Surface | ||
Pin Count 22 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 211W | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- MY
The Infineon 750 V CoolSiC MOSFET is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgapSiC material characteristics, the 750V CoolSiC MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
Infineon proprietary die attach technology
Driver source pin available
Enhanced robustness and reliability for bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Best in class thermal dissipation
Reduced switching losses through improved gate control
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