Microchip TP0610T Type P-Channel MOSFET, 60 V Enhancement, 3-Pin SOT-23 TP0610T-G
- RS-artikelnummer:
- 333-219
- Tillv. art.nr:
- TP0610T-G
- Tillverkare / varumärke:
- Microchip
Antal (1 rulle med 3000 enheter)*
27 249,00 kr
(exkl. moms)
34 062,00 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Ny produkt − Förbeställ idag
- Leverans från den 10 februari 2026
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 3000 + | 9,083 kr | 27 249,00 kr |
*vägledande pris
- RS-artikelnummer:
- 333-219
- Tillv. art.nr:
- TP0610T-G
- Tillverkare / varumärke:
- Microchip
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | TP0610T | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series TP0610T | ||
Mount Type Surface | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Microchip MOSFET is a low threshold, enhancement mode transistor utilizes a vertical DMOS structure and well proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Free from secondary breakdown
Low input and output leakage
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