onsemi NCV Type N, Type P-Channel MOSFET, 65 V Dual, 8-Pin SOIC-8 NCV8406DD1CR2G
- RS-artikelnummer:
- 327-795
- Tillv. art.nr:
- NCV8406DD1CR2G
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 längd med 10 enheter)*
88,93 kr
(exkl. moms)
111,16 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 20 april 2026
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 10 - 90 | 8,893 kr | 88,93 kr |
| 100 - 240 | 8,445 kr | 84,45 kr |
| 250 - 490 | 7,818 kr | 78,18 kr |
| 500 - 990 | 7,202 kr | 72,02 kr |
| 1000 + | 6,933 kr | 69,33 kr |
*vägledande pris
- RS-artikelnummer:
- 327-795
- Tillv. art.nr:
- NCV8406DD1CR2G
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N, Type P | |
| Maximum Drain Source Voltage Vds | 65V | |
| Package Type | SOIC-8 | |
| Series | NCV | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 210mΩ | |
| Channel Mode | Dual | |
| Maximum Power Dissipation Pd | 1.2W | |
| Maximum Gate Source Voltage Vgs | 14 V | |
| Forward Voltage Vf | 1.1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 5mm | |
| Width | 4 mm | |
| Standards/Approvals | RoHS, Pb-Free | |
| Height | 1.75mm | |
| Automotive Standard | AEC-Q101 | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N, Type P | ||
Maximum Drain Source Voltage Vds 65V | ||
Package Type SOIC-8 | ||
Series NCV | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 210mΩ | ||
Channel Mode Dual | ||
Maximum Power Dissipation Pd 1.2W | ||
Maximum Gate Source Voltage Vgs 14 V | ||
Forward Voltage Vf 1.1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 5mm | ||
Width 4 mm | ||
Standards/Approvals RoHS, Pb-Free | ||
Height 1.75mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- PH
The ON Semiconductor Dual protected Low-Side Smart Discrete device offers comprehensive protection features, including overcurrent, over temperature, ESD, and integrated Drain-to-Gate clamping for overvoltage protection. It is designed for reliable performance in harsh automotive environments.
Short Circuit Protection
Thermal Shutdown with Automatic Restart
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