Infineon 650V CoolMOS SiC N-Channel MOSFET, 24 A, 650 V, 22-Pin PG-HDSOP-22 IPDQ65R125CFD7XTMA1

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RS-artikelnummer:
284-886
Tillv. art.nr:
IPDQ65R125CFD7XTMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

24 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS

Package Type

PG-HDSOP-22

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features a latest iteration of the 650V CoolMOS technology, this power device showcases an innovative blend of reduced switching losses and exceptional thermal performance. Designed to optimise efficiency in resonant switching scenarios, it excels in applications requiring high power density and reliability. This device acts as a modern successor in the CoolMOS family, offering enhanced features suitable for a variety of demanding industrial applications. With its ultra fast body diode and superior hard commutation robustness, this device is particularly adept in soft switching topologies, providing solutions for sectors such as telecommunications and electric vehicle charging. Optimised for design flexibility, it meets stringent efficiency standards and high reliability requirements while facilitating cost effective performance for contemporary power applications.

Ultra fast body diode enhances switching
Reduces switching losses for energy efficiency
Extra safety margin for high bus voltage
Enables compact high power density solutions
Outstanding light load efficiency for industrial use
Price competitive with previous CoolMOS families
Fully compliant with JEDEC standards

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