ROHM R60 Type N-Channel MOSFET, 600 V Enhancement, 3-Pin SOT-223-3 R6002JND4TL1
- RS-artikelnummer:
- 264-855
- Tillv. art.nr:
- R6002JND4TL1
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 längd med 25 enheter)*
107,975 kr
(exkl. moms)
134,975 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Tillfälligt slut
- Leverans från den 18 maj 2026
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Enheter | Per enhet | Per Längd* |
|---|---|---|
| 25 - 75 | 4,319 kr | 107,98 kr |
| 100 - 225 | 4,104 kr | 102,60 kr |
| 250 - 475 | 3,799 kr | 94,98 kr |
| 500 - 975 | 3,499 kr | 87,48 kr |
| 1000 + | 3,364 kr | 84,10 kr |
*vägledande pris
- RS-artikelnummer:
- 264-855
- Tillv. art.nr:
- R6002JND4TL1
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223-3 | |
| Series | R60 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.25Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6.6W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Typical Gate Charge Qg @ Vgs | 7.0nC | |
| Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223-3 | ||
Series R60 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.25Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6.6W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Typical Gate Charge Qg @ Vgs 7.0nC | ||
Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM 600V 1A SOT-223-3 Presto MOS with integrated high-speed diode is a power MOSFET with fast reverse recovery time, suitable for the switching applications. Which increases design flexibility while maintaining the industry’s fastest reverse recovery time optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).
Fast reverse recovery time
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating and RoHS compliant
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