ROHM R60 Type N-Channel MOSFET, 600 V Enhancement, 3-Pin SOT-223-3 R6003JND4TL1
- RS-artikelnummer:
- 264-849
- Tillv. art.nr:
- R6003JND4TL1
- Tillverkare / varumärke:
- ROHM
Mängdrabatt möjlig
Antal (1 längd med 10 enheter)*
86,58 kr
(exkl. moms)
108,22 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- Dessutom levereras 60 enhet(er) från den 29 december 2025
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet | Per Längd* |
|---|---|---|
| 10 - 90 | 8,658 kr | 86,58 kr |
| 100 - 240 | 8,21 kr | 82,10 kr |
| 250 - 490 | 7,594 kr | 75,94 kr |
| 500 - 990 | 7,00 kr | 70,00 kr |
| 1000 + | 6,742 kr | 67,42 kr |
*vägledande pris
- RS-artikelnummer:
- 264-849
- Tillv. art.nr:
- R6003JND4TL1
- Tillverkare / varumärke:
- ROHM
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223-3 | |
| Series | R60 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.15Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 7.8W | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223-3 | ||
Series R60 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.15Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 7.8W | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM 600V 1.3A SOT 223 3 Presto MOS with integrated high-speed diode is a power MOSFET with fast reverse recovery time, suitable for the switching applications. Which increases design flexibility while maintaining the industry’s fastest reverse recovery time optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners.
Fast reverse recovery time
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating and RoHS compliant
relaterade länkar
- ROHM R60 Type N-Channel MOSFET 3-Pin SOT-223-3 R6003KND4TL1
- ROHM R60 Type N-Channel MOSFET 3-Pin SOT-223-3 R6002JND4TL1
- ROHM R60 Type N-Channel MOSFET 3-Pin SOT-223-3 R6006KND4TL1
- ROHM R60 Type N-Channel MOSFET 3-Pin SOT-223-3 R6004END4TL1
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220AB R6049YNX3C16
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6010YND3TL1
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220FM R6038YNXC7G
- ROHM R60 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 R6004RND3TL1